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TC2001 Folha de dados(PDF) 12 Page - Tripath Technology Inc. |
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TC2001 Folha de dados(HTML) 12 Page - Tripath Technology Inc. |
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12 / 34 page ![]() Tr i p ath Technol ogy, I n c. - Techni cal I n for m ati on 12 TK2150 – Rev. 1.0/12.02 DD Drain diode. This diode must be connected from the drain of the high side output MOSFET to the drain of the low side output MOSFET. This diode absorbs any high frequency overshoots caused by the output inductor LO during high output current conditions. In order for this diode to be effective it must be connected directly to the drains of both the top and bottom side output MOSFET. A fast or ultra fast recovery diode that can sustain the entire VPP-VNN voltage should be used here. In most applications a 150V or greater diode must be used. DS Source diode. This diode must be connected from the source of the high side output MOSFET to the source of the low side output MOSFET. This diode absorbs any high frequency undershoots caused by the output inductor LO during high output current conditions. In order for this diode to be effective it must be connected directly to the sources of both the top and bottom sides output MOSFETs. A fast or ultra fast recovery diode that can sustain the entire VPP-VNN voltage should be used here. In most applications a 150V or greater diode must be used. RPG Gate resistor for the output MOSFET for the switchmode power supply. Controls the rise time, fall time, and reduces ringing for the gate of the output MOSFET for the switchmode power supply. QB Output MOSFET for the switchmode power supply to generate the VN10. This output MOSFET must be a P channel device. DSW Flywheel diode for the internal VN10 buck converter. This diode also prevents VN10SW from going more than one diode drop negative with respect to VNN. This diode should be a Shottky or ultrafast rectifier. LSW VN10 generator filter inductor. This inductor should be sized appropriately so that LSW does not saturate, and VN10 does not overshoot with respect to VNN during TK2150 turn on. CSW VN10 generator filter capacitors. The high frequency capacitor (0.1uF) must be located close to the VN10 pins (pin 41 and 43 of the TP2150) to maximize device performance. The bulk capacitor (100uF) should be sized appropriately such that the VN10 voltage does not overshoot with respect to VNN during TK2150 turn on. RSWFB VN10 generator feedback resistor. This resistor sets the nominal VN10 voltage. With RSWFB equal to 1kΩ, the VN10 voltage generated will typically be 10V above VNN. CSWFB VN10 generator feedback capacitor. This capacitor, in conjunction with RSWFB, filters the VN10 feedback signal such that the loop is unconditionally stable. |
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