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JCS2N60MFB Folha de dados(PDF) 3 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

Nome de Peças JCS2N60MFB
Descrição Electrónicos  N-CHANNEL MOSFET
PDF  10 Pages
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Fabricante Electrônico  JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]
Página de início  http://www.hwdz.com.cn
Logo JSMC - JILIN SINO-MICROELECTRONICS CO., LTD.

JCS2N60MFB Folha de dados(HTML) 3 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

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JCS2N60M（MF）B
版本：201304A
3/10
电特性 ELECTRICAL CHARACTERISTICS
项
目
Parameter
符
号
Symbol
测试条件
Tests conditions
最大
Min
典型
Typ
最大
Max
单位
Units
关态特性 Off –Characteristics
漏－源击穿电压
Drain-Source Voltage
BVDSS
I
B
D
B
=250μA, V
B
GS
B
=0V
600
-
-
V
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/ΔTJ
I
B
D
B
=1mA, referenced to
25℃
-
0.6
-
V/℃
V
B
DS
B
=600V,V
B
GS
B
=0V,
T
B
C
B
=25℃
-
-
10
μA
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
IDSS
V
B
DS
B
=480V,
T
B
C
B
=125℃
-
-
100
μA
正向栅极体漏电流
Gate-body leakage current,
forward
IGSSF
V
B
DS
B
=0V, V
B
GS
B
=30V
-
-
100
nA
反向栅极体漏电流
Gate-body leakage current,
reverse
IGSSR
VDS=0V, VGS =-30V
-
- -100 nA
通态特性 On-Characteristics
阈值电压
Gate Threshold Voltage
VGS(th)
VDS = V
B
GS
B
, ID=250μA
2.0
-
4.0
V
静态导通电阻
Static Drain-Source
On-Resistance
RDS(ON)
VGS =10V , ID=1A
-
3.9 5.0
Ω
正向跨导
Forward Transconductance
gfs
VDS = 40V , ID=1.0A（note 4） -
2.05 -
S
动态特性 Dynamic Characteristics
输入电容
Input capacitance
Ciss
-
190 230
pF
输出电容
Output capacitance
Coss
-
15
20
pF
反向传输电容
Reverse transfer capacitance
Crss
VDS=25V,
VGS =0V,
f=1.0MH
B
Z
B
-
1.8 2.1
pF



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