KBP2005 datasheet(2/2 Pages) GXELECTRONICS

Nome de Peças	KBP2005

Descrição Electrónicos	2.0 A Single-Phase Silicon Bridge Rectifier

PDF	2 Pages

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Fabricante Electrônico	GXELECTRONICS [Gaomi Xinghe Electronics Co., Ltd.]

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ＧＡＯＭＩ　ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ　ＣＯ．，ＬＴＤ．　　　　　　　　　　　　　　　　　　ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ

Fig. 1 Derating Curve for

Output Rectified Current

2.0

Fig. 2 Maximum Non-repetitive Peak

Forward Surge Current

8.3ms

1.5

Case

Lead

Single half-sine-Wave

[JEDEC Method]

1.0

0.5

Ambient

100

Number of Cycles at 60HZ

100

150

Fig. 4 Typical Reverse

Characteristics

Case Temperature,

TA=125 C

1.0

TA=100 C

Fig. 3 Typical Instantaneous

Forward Characteristics

0.1

1.0

Tj=25 C

Pulse Width=300us

2% duty cycle

TA=25 C

.01

100

120

140

Percent of Rated Peak Reverse

Voltage, %

Fig. 5 Typical Junction Capacitance

0.1

100

Tj=25 C

f=1.0MHz

.01

0.4

0.6

0.8

1.0

1.2

1.4

Instantaneous Forward

Voltage, Volts

100

Reverse Voltage, Volts

KBP2005 thru KBP210

2.0 A Single-Phase Silicon Bridge Rectifier

Rectifier Reverse Voltage 50 to 1000V

星合电子

ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ

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