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TGA4548-SM-R Folha de dados(PDF) 2 Page - TriQuint Semiconductor

Nome de Peças TGA4548-SM-R
Descrição Electrónicos  17 - 20 GHz 10 W GaN Power Amplifier
PDF  12 Pages
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Fabricante Electrônico  TRIQUINT [TriQuint Semiconductor]
Página de início  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

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TGA4548-SM
17 – 20 GHz 10 W GaN Power Amplifier
Data Sheet Rev. C, April 24, 2017 | Subject to change without notice
2 of 12
www.qorvo.com
Recommended Operating Conditions
Parameter
Min
Typ
Max
Units
Drain Voltage (VD)
+28
V
Operating Temp. Range
−40
+25
+85
°C
IDQ
300
mA
VG
−2.6
V
ID drive (at +38dBm Pout)
930
mA
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Absolute Maximum Ratings
Parameter
Rating
Drain Voltage (VD)
29.5 V
Gate Voltage Range (VG)
-8 to 0 V
RF Input Power, CW, 50  , T=25 °C
26 dBm
Dissipated Power (PDISS), CW, 85°C
45 W
Storage Temperature
−55 to +150 °C
Mounting Temperature (30 seconds)
320 °C
Channel Temperature (TCH)
275 °C
Drain Current (ID1), Top or Bottom
500 mA
Drain Current (ID2), Top or Bottom
500 mA
Drain Current (ID3), Top and Bottom
2 A
Forward Gate Current (IG1), Top or Bottom
3 mA
Forward Gate Current (IG2), Top or Bottom
12 mA
Forward Gate Current (IG3), Top and Bottom
48 mA
Reference Power Detect (Iref)
4 mA
Power Detect Diode (Idet)
4 mA
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.
Electrical Specifications
Parameter
Conditions 
(1)
Min
Typ
Max
Units
Operational Frequency Range
17
20
GHz
Small Signal Gain
27
dB
Input Return Loss
17
dB
Output Return Loss
10
dB
Output Power at Saturation, Psat
41
dBm
Power Added Efficiency, PAE
Pin = 12 dBm, 17.7 GHz
Pin = 12 dBm, 18.5 GHz
Pin = 12 dBm, 19.7 GHz
34
34
28
%
Third Order Intermodulation, IM3
Pout = +34 dBm/tone
−25
dBc
Gain Temperature Coefficient
Tdiff = (85 – (−40)) °C
−0.054
dB/°C
Power Temperature Coefficient
Tdiff = (85 – (−40)) °C, Pin = +5 dBm
−0.041
dBm/°C
Notes:
1.
Test conditions unless otherwise noted: VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, VG1 = VG2 = VG3 = −2.6V typical,
Temp = +25 °C, Z0 = 50 



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