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QPD1025LS2 Folha de dados(PDF) 15 Page - TriQuint Semiconductor |
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QPD1025LS2 Folha de dados(HTML) 15 Page - TriQuint Semiconductor |
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15 / 18 page ![]() QPD1025L 1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor Datasheet Rev. B │ Subject to change without notice - 15 of 18 - www.qorvo.com 1.0 – 1.1 GHz Application Circuit - Schematic Bias-up Procedure Bias-down Procedure 1. Set VG to -5 V. 1. Turn off RF signal. 2. Set ID current limit to 4 A. 2. Turn off VD 3. Apply 65 V VD. 3. Wait 2 seconds to allow drain capacitor to discharge. 4. Slowly adjust VG until ID is set to 1.5 A. 4. Turn off VG 5. Apply RF. |
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