STPS1H100U datasheet(2/7 Pages) STMICROELECTRONICS

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STPS1H100

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Table 4: Thermal Resistance

Table 5: Static Electrical Characteristics

Pulse test:

* tp = 5 ms,

δ < 2%

** tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation: P = 0.54 x IF(AV) + 0.08 IF

(RMS)

Symbol

Parameter

Value

Unit

Rth(j-l)

Junction to lead

SMA

°C/W

SMB

Symbol

Parameter

Tests conditions

Min.

Typ

Max.

Unit

IR *

Reverse leakage current

Tj = 25°C

VR = VRRM

µA

Tj = 125°C

0.2

0.5

VF **

Forward voltage drop

Tj = 25°C

IF = 1A

0.77

Tj = 125°C

0.58

0.62

Tj = 25°C

IF = 2A

0.86

Tj = 125°C

0.65

0.7

Figure 1: Average forward power dissipation

versus average forward current

Figure 2: Average forward current versus

ambient temperature (

δ = 0.5)

Figure

Normalized

avalanche

power

derating versus pulse duration

Figure

Normalized

avalanche

power

derating versus junction temperature

(W)

F(AV)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

δ=tp/T

(A)

F(AV)

δ = 1

δ = 0.1

δ = 0.05

δ = 0.5

δ = 0.2

(A)

F(AV)

100

120

140

160

180

0.0

0.2

0.4

0.6

0.8

1.0

1.2

δ=tp/T

(°C)

amb

=100°C/W

th(j-a)

R=R

th(j-a)

th(j-I)

=120°C/W

th(j-a)

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

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