HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6133

Issued Date : 1993.06.18

Revised Date : 2002.02.18

Page No. : 1/4

HPH2369

HSMC Product Specification

HPH2369

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HPH2369 is designed for general purpose switching and

amplifier applications.

Features

• Low Collector Saturation Voltage

• High speed switching Transistor

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature .................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................ 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 40 V

VCES Collector to Emitter Voltage ...................................................................................... 40 V

VCEO Collector to Emitter Voltage ...................................................................................... 15 V

VEBO Emitter to Base Voltage ........................................................................................... 4.5 V

IC Collector Current ....................................................................................................... 500 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

40

-

-

V

IC=100uA, IE=0

BVCEO

15

-

-

V

IC=10mA, IB=0

BVCES

40

-

-

V

IC=10uA, VBE=0

BVEBO

4.5

-

-

V

IE=10uA, IC=0

ICBO

-

-

400

nA

VCB=20V, IE=0

ICES

-

-

300

nA

VCE=25V, VBE=0

IEBO

-

-

100

nA

VEB=2V, IC=0

*VCE(sat)1

-

-

250

mV

IC=10mA, IB=1mA

*VCE(sat)2

-

-

300

mV

IC=10mA, IB=0.3mA

*VCE(sat)3

-

-

600

mV

IC=100mA, IB=10mA

*VBE(sat)1

700

-

850

mV

IC=10mA, IB=1mA

*VBE(sat)2

-

-

1.5

V

IC=100mA, IB=1mA

*hFE1

40

80

120

IC=10mA, VCE=1V

*hFE2

20

-

-

IC=100mA, VCE=2V

fT

500

-

-

MHz

IC=10mA, VCE=10V, f=100MHZ

Cob

-

-

4

pF

VCB=5V, f=1MHz, IE=0

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

TO-92