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SSD02N60J Folha de dados(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Nome de Peças SSD02N60J
Descrição Electrónicos  N-Ch Enhancement Mode Power MOSFET
PDF  3 Pages
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Fabricante Electrônico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de início  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSD02N60J Folha de dados(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSD02N60J
2A, 600V, RDS(ON) 4.4
N-Ch Enhancement Mode Power MOSFET
04-Nov-2015 Rev. A
Page 2 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (T
A=25°C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
600
-
-
V
VGS=0, ID=250µA
Gate-Threshold Voltage
1
VGS(th)
2
-
4
V
VDS=VGS, ID=250µA
Gate-Source Leakage Current
1
IGSS
-
-
±100
nA
VDS=0V, VGS= ±20V
Drain-Source Leakage Current
IDSS
-
-
25
µA
VDS=600V, VGS=0
Static Drain-Source On-Resistance
1
RDS(ON)
-
-
4.4
VGS=10V, ID=1A
Forward Transconductance
1
gFS
1
-
-
S
VDS=50V, ID=1A
Input Capacitance
Ciss
-
435
-
Output Capacitance
Coss
-
56
-
Reverse Transfer Capacitance
Crss
-
9.2
-
pF
VDS=25V
VGS=0
f=1MHz
Turn-on Delay Time
Td(on)
-
12
-
Rise Time
Tr
-
21
-
Turn-off Delay Time
Td(off)
-
30
-
Fall Time
Tf
-
24
-
nS
VDD=300V
VGS=10V
RG=18
ID=2A
Diode Forward Voltage
1
VSD
-
-
1.6
V
IS=2A, VGS=0
Notes:
1.
Pulse Test : Pulse width≦300µs, duty cycle≦2%.



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