SSA55H12J datasheet(2/3 Pages) SECOS

2 / 3 page

SSA55H12J

120A, 55V, RDS(ON) 5.5 m

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

28-Jun-2016 Rev. A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Off Characteristics

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0, ID=250µA

Zero Gate Voltage Drain Current

IDSS

µA

VDS=55V, VGS=0

100

VDS=0.8 × Rated V(BR)DSS,

VGS=0, TJ=125°C

Gate-Body Leakage Current

IGSS

±100

VDS=0V, VGS= ±20V

On Characteristics

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

Static Drain-Source On-Resistance

RDS(ON)

4.1

5.5

VGS=10V, ID=40A

Forward Transconductance

gFS

VDS=25V, ID=40A

Dynamic Characteristics

Input Capacitance

Ciss

4900

VDS=25V

VGS=0

f=1MHz

Output Capacitance

Coss

470

Reverse Transfer Capacitance

Crss

460

Switching Characteristics

Total Gate Charge

125

VDS=30V

VGS=10V

ID=30A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-on Delay Time

Td(on)

VDS=30V

VGS=10V

RGEN=2.5

ID=2A

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

Source-Drain Diode Characteristics

Diode Forward Voltage

VSD

1.2

VGS=0, IS=40A

Continuous Drain-Source Diode

Forward Current

120

Pulsed Drain-Source Diode

Forward Current

ISM

420

Notes:

EAS condition: VDD=30V, L=0.5mH, RG=25 , starting TJ=25°C.

Pulse test：Pulse width≦300µs, duty cycle≦2%.

The surface of the device is mounted on a FR4 board, t≦10s.

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