M8050T datasheet(1/1 Pages) SECOS

Nome de Peças	M8050T

Descrição Electrónicos	40V, 0.8A NPN Plastic Encapsulate Transistor

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Fabricante Electrônico	SECOS [SeCoS Halbleitertechnologie GmbH]

Página de início	http://www.secosgmbh.com

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1 / 1 page

M8050T

40V, 0.8A

NPN Plastic Encapsulate Transistor

Elektronische Bauelemente

29-Jan-2013 Rev. A

Page 1 of 1

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

2

Base

1

Emitter

Collector

3

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Power dissipation

MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

40

V

Collector - Emitter Voltage

VCEO

25

V

Emitter - Base Voltage

VEBO

6

V

Collector Current - Continuous

IC

0.8

A

Collector Power Dissipation

PC

625

mW

Junction, Storage Temperature

TJ, TSTG

125, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Collector-Base Breakdown Voltage

IC =100µA, IE =0

V(BR)CBO

40

-

V

Collector-Emitter Breakdown Voltage

1

IC =1mA, IB =0

V(BR)CEO

25

-

V

Emitter-Base Breakdown Voltage

IE =100µA, IC =0

V(BR)EBO

6

-

V

Collector Cut-Off Current

VCB=35V, IE=0

ICBO

-

0.1

µA

Emitter Cut-Off Current

VCE=20V, IB=0

ICEO

-

0.1

µA

DC Current Gain

VCE=1V, IC=5mA

hFE1

45

-

VCE=1V, IC=100mA

hFE2

80

-

400

VCE=1V, IC=800mA

hFE3

40

-

Collector-Emitter Saturation Voltage

IC=800mA, IB=80mA

VCE(sat)

-

0.5

V

Base-Emitter Saturation Voltage

IC=800mA, IB=80mA

VBE(sat)

-

1.2

V

Transition frequency

VCE=6V, IC=20mA, f=30MHz

fT

150

-

MHz

Note:

1.

Pulse test：pulse width

300

S, duty cycle

2%.

≦

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

4.40

4.70

F

0.30

0.51

B

4.30

4.70

G

1.27 TYP.

C

12.70

-

H

1.10

1.40

D

3.30

3.81

J

2.42

2.66

E

0.36

0.56

K

0.36

0.76

1

1 Emitter

2

2 Base

3

3 Collector

TO-92

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