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ASL41S9 Folha de dados(PDF) 3 Page - Advanced Semiconductor Business Inc. |
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ASL41S9 Folha de dados(HTML) 3 Page - Advanced Semiconductor Business Inc. |
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3 / 11 page ![]() 3/11 ASB Inc. sales@asb.co.kr January 2017 ASL41S9 2.4 Absolute Maximum Ratings Parameters Max. Ratings Operation Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +5.5 V Operation Junction Temperature +150 C Input RF Power (CW, 50 matched) +25 dBm 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 80 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1A Voltage Level: 400 V MM Class A Voltage Level: 50 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 C reflow (Intentionally Blanked) |
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