SL3145

30

18

55

20

0.74

0.26

0.1

0.95

0.45

0.35

0.2

0.2

2.0

-1.6

100

0.3

0.6

100

0.4

0.4

0.8

1.6

3.0

1

20

15

20

10

0.64

40

∂T

∂T

NF

ELECTRICAL CHARACTERISTICS

These characteristics are guaranteed over the following test conditions (unless otherwise stated)

°C ± 2°C

0.84

0.5

1

5

5

3

2

Value

Units

Conditions

Min.

Typ.

Max.

Symbol

Static characteristic

Collector base breakdown

Collector emitter breakdown

Collector substrate breakdown (isolation)

Base to isolation breakdown

Base emitter voltage

Collector emitter saturation voltage

Emitter base leakage current

Base emitter saturation voltage

Base emitter voltage difference,

all transistors expect TR1, TR2

Base emitter voltage difference

TR1, TR2

Input offset current

(except for TR1, TR2)

Input offset current TR1, TR2

Temperature coefficient of

Static forward current ratio

Collector base leakage

Collector isolation leakage

Base isolation leakage

Emitter base capacitance

Collector base capacitance

SL3145

Collector isolation capacitance

Dynamic characteristics

Transition frequency

SL3145

Wideband noise figure

Knee of 1/f noise curve

V

V

V

V

V

V

µA

V

mV

mV

µA

µA

µV/°C

mV/

°C

nA

nA

nA

pF

pF

pF

GHz

dB

KHz

Ω

µA, f = 60MHz

Ω

Characteristic

ABSOLUTE MAXIMUM RATINGS

The absolute maximum ratings are limiting values above

which operating life may be shortened or specified parameters

may be degraded.

All electrical ratings apply to individual transistors. Thermal

ratings apply to the total package.

The isolation pin (substrate) must be connected to the most

negative voltage applied to the package to maintain electrical

isolation.

Maximum individual transistor dissipation 200 mWatt

Storage temperature -55

°C to 150°C

Max junction temperature 150

°C

Package thermal resistance (

Package Type

MP14

Chip to case

45

°C/W

Chip to ambient

123

°C/W

NOTE:

If all the power is being dissipated in one transistor, these

thermal resistance figures should be increased by 100

°C/watt