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TCST1230 Folha de dados(PDF) 2 Page - Vishay Siliconix

Nome de Peças TCST1230
Descrição Electrónicos  Transmissive Optical Sensor with Phototransistor Output
PDF  7 Pages
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TCST1230 Folha de dados(HTML) 2 Page - Vishay Siliconix

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TCST1230
Vishay Semiconductors
www.vishay.com
2 (7)
Rev. A4, 08–Jun–99
Document Number 83765
Absolute Maximum Ratings
Input (Emitter)
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
VR
6
V
Forward current
IF
60
mA
Forward surge current
tp ≤ 10 mA
IFSM
3
A
Power dissipation
Tamb ≤ 25°C
PV
100
mW
Junction temperature
Tj
100
°C
Output (Detector)
Parameter
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7
V
Collector current
IC
100
mA
Power dissipation
Tamb ≤ 25°C
PV
150
mW
Junction temperature
Tj
100
°C
Coupler
Parameter
Test Conditions
Symbol
Value
Unit
Total power dissipation
Tamb ≤ 25°C
Ptot
250
mW
Operation temperature range
Tamb
–25 to +85
°C
Storage temperature range
Tstg
–40 to +100
°C
Soldering temperature
1.6 mm from case, t
≤ 5 s
Tsd
260
°C
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
IF = 60 mA
VF
1.25
1.5
V
Junction capacitance
VR = 0, f = 1 MHz
Cj
50
pF
Output (Detector)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emittter voltage
IC = 1 mA
VCEO
70
V
Emitter collector voltage
IE = 10 mA
VECO
7
V
Collector dark current
VCE = 25 V, IF = 0, E = 0
ICEO
10
100
nA
Coupler
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector current
VCE = 10 V, IF = 20 mA
IC
0.5
14
mA
Collector emitter
saturation voltage
IF = 20 mA, IC = 0.2 mA
VCEsat
0.4
V



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