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SW69N65K2 Folha de dados(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW69N65K2 Folha de dados(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 6 page  Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Sep. 2016. Rev. 2.0 1/6 SW69N65K2 Absolute maximum ratings Symbol Parameter Value Unit V DSS Drain to source voltage 650 V I D Continuous drain current (@T C=25 oC) 69* A Continuous drain current (@T C=100 oC) 43* A I DM Drain current pulsed (note 1) 276 A V GS Gate to source voltage ± 30 V E AS Single pulsed avalanche energy (note 2) 2335 mJ E AR Repetitive avalanche energy (note 1) 235 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns P D Total power dissipation (@T C=25 oC) 625 W Derating factor above 25oC 5 W/oC T STG, TJ Operating junction temperature & storage temperature -55 ~ + 150 oC T L Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit R thjc Thermal resistance, Junction to case 0.2 oC/W R thja Thermal resistance, Junction to ambient 36 oC/W *. Drain current is limited by junction temperature. 1. Gate 2. Drain 3. Source Order Codes Item Sales Type Marking Package Packaging 1 SW T 69N65K2 SW69N65K2 TO-247 TUBE N-channel Enhanced mode TO-247 MOSFET Features High ruggedness Low R DS(ON) (Typ 32mΩ) Low Gate Charge (Typ 181nC) Improved dv/dt Capability 100% Avalanche Tested Application:Charge,LED,PC Power General Description This power MOSFET is produced with super junction advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BV DSS : 650V I D : 69A R DS(ON) : 32mΩ 1 2 3 TO-247 1 2 3 |
Nº de peça semelhante - SW69N65K2 |
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Descrição semelhante - SW69N65K2 |
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