TS884IPT datasheet(6/26 Pages) STMICROELECTRONICS

Nome de Peças	TS884IPT

Descrição Electrónicos	Rail-to-rail 1.1 V dual and quad nanopower comparators

PDF	26 Pages

Scroll/Zoom	100%

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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Electrical characteristics

TS882, TS884

6/26

DocID024119 Rev 3

Fall time (90% to 10%)

CL = 30 pF, RL = 1 MΩ

110

TON

Power-up time

1.1

1.7

All values over the temperature range are guaranteed through correlation and simulation. No production test is performed

at the temperature range limits.

The offset is defined as the average value of positive and negative trip points (input voltage differences requested to

change the output state in each direction).

The hysteresis is a built-in feature of the TS882 device. It is defined as the voltage difference between the trip points.

Maximum values include unavoidable inaccuracies of the industrial tests.

Table 4. VCC = +1.2 V, Tamb = +25 °C, VICM = VCC/2 (unless otherwise specified)

(1) (continued)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

TS884IPT Folha de dados(PDF) 6 Page - STMicroelectronics