TS882 datasheet(9/26 Pages) STMICROELECTRONICS

Nome de Peças	TS882

Descrição Electrónicos	Rail-to-rail 1.1 V dual and quad nanopower comparators

PDF	26 Pages

Scroll/Zoom	100%

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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9 / 26 page

DocID024119 Rev 3

9/26

TS882, TS884

Electrical characteristics

Fall time (90% to 10%)

CL = 30 pF, RL = 1 MΩ

150

TON

Power-up time

1.1

1.7

All values over the temperature range are guaranteed through correlation and simulation. No production test is performed

at the temperature range limits.

The offset is defined as the average value of positive and negative trip points (input voltage differences requested to

change the output state in each direction).

The hysteresis is a built-in feature of the TS882 device. It is defined as the voltage difference between the trip points.

Maximum values include unavoidable inaccuracies of the industrial tests.

Table 6. VCC = +5 V, Tamb = +25 °C, VICM = VCC/2 (unless otherwise specified)

(1) (continued)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

TS882 Folha de dados(PDF) 9 Page - STMicroelectronics