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MP6759 Folha de dados(PDF) 1 Page - Toshiba Semiconductor |
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MP6759 Folha de dados(HTML) 1 Page - Toshiba Semiconductor |
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1 / 6 page ![]() MP6759 2002-11-20 1 TOSHIBA GTR Module Silicon N Channel IGBT MP6759 Motor Control Applications High Power Switching Applications · The electrodes are isolated from case. · 6 IGBTs are built into 1 package. · Enhancement-mode · Low saturation voltage : VCE (sat) = 2.7 V (max) (IC = 10 A) · High speed: tf = 0.35 µs (max) (IC = 10 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 10 Collector current 1 ms ICP 20 A DC IF 10 Forward current 1 ms IFM 20 A Collector power dissipation (Tc = 25°C) PC 40 W Junction temperature Tj 150 °C Storage temperature range Tstg −40 to 125 °C Isolation voltage VIsol 2500 (AC 1 minute) V Screw torque ― 1.5 N·m Unit: mm JEDEC ― JEITA ― TOSHIBA 2-78A1A Weight: 44 g (typ.) |
Nº de peça semelhante - MP6759 |
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Descrição semelhante - MP6759 |
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