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IRLL2703 Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRLL2703
Descrição Electrónicos  HEXFET Power MOSFET
PDF  8 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRLL2703 Folha de dados(HTML) 2 Page - International Rectifier

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IRLL2703
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Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.06
–––
V/°C
Reference to 25°C, ID = 1mA
–––
––– 0.045
VGS = 10V, ID = 3.9A
„
–––
––– 0.060
VGS = 5.0V, ID = 3.1A
„
–––
––– 0.070
VGS = 4.0V, ID = 2.0A
„
VGS(th)
Gate Threshold Voltage
1.0
–––
2.4
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
5.9
–––
–––
S
VDS = 25V, ID = 2.3 A
–––
–––
25
µA
VDS = 30V, VGS = 0V
–––
–––
250
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -16V
Qg
Total Gate Charge
–––
9.3
14
ID = 2.3A
Qgs
Gate-to-Source Charge
–––
2.3
3.4
nC
VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
–––
5.1
7.6
VGS = 5.0V, See Fig. 6 and 9
„
td(on)
Turn-On Delay Time
–––
7.4
–––
VDD = 15V
tr
Rise Time
–––
24
–––
ns
ID = 2.3A
td(off)
Turn-Off Delay Time
–––
6.9
–––
RG = 6.2 Ω
tf
Fall Time
–––
14
–––
RD = 6.5 Ω, See Fig. 10
„
Ciss
Input Capacitance
–––
530
–––
VGS = 0V
Coss
Output Capacitance
–––
230
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
95
–––
ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD ≤ 2.3A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
‚ Starting T
J = 25°C, L = 24 mH
RG = 25Ω, IAS = 3.9A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.0
V
TJ = 25°C, IS = 2.3A, VGS = 0V
„
trr
Reverse Recovery Time
–––
42
63
ns
TJ = 25°C, IF = 2.3A
Qrr
Reverse RecoveryCharge
–––
62
94
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
16
3.9
A



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