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PACDN045YB6R-R Folha de dados(PDF) 3 Page - ON Semiconductor |
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PACDN045YB6R-R Folha de dados(HTML) 3 Page - ON Semiconductor |
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3 / 14 page ![]() PACDN042 www.onsemi.com 3 Table 1. PIN DESCRIPTIONS Pins Name Description (Refer to Package Outline Drawings) TVS Cathode The cathode of the respective TVS diode, which should be connected to the node requiring transient voltage protection. (Refer to Package Outline Drawings) GND The anode of the TVS diodes. SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units Storage Temperature Range −65 to +150 °C Package Power Dissipation SC70 SOT23−3, SOT23−5, SOT23−6, SOT−143 TSSOP, MSOP 0.2 0.225 0.5 W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 3. STANDARD OPERATING CONDITIONS Parameter Rating Units Operating Temperature −40 to +85 °C Table 4. ELECTRICAL OPERATING CHARACTERISTICS Symbol Parameter Conditions Min Typ Max Units C Capacitance TA = 25°C, 2.5 VDC, 1 MHz 30 pF VRSO Reverse Stand−off Voltage IR = 10 mA, TA = 25°C 5.5 V IR = 1 mA, TA = 25°C 6.1 V ILEAK Leakage Current VIN = 5.0 VDC, TA = 25°C 1 100 nA VSIG Small Signal Clamp Voltage Positive Clamp Negative Clamp I = 10 mA, TA = 25°C I = −10 mA, TA = 25°C 6.2 −0.4 6.8 −0.8 8 −1.2 V VESD ESD Withstand Voltage Human Body Model, MIL−STD−883, Method 3015 Contact Discharge per IEC 61000−4−2 Standard (Note 1) (Note 1) ±30 ±20 kV RD Diode Dynamic Resistance Forward Conduction Reverse Conduction 1.0 1.4 W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. ESD voltage applied between channel pins & ground, one pin at a time; all other channel pins open; all GND pins grounded. |
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