OA1NP datasheet(18/31 Pages) STMICROELECTRONICS

18 / 31 page

Application information

OA1NP, OA2NP, OA4NP

18/31

DocID025993 Rev 2

4.4

Long term input offset voltage drift

To evaluate product reliability, two types of stress acceleration are used:



Voltage acceleration, by changing the applied voltage



Temperature acceleration, by changing the die temperature (below the maximum

junction temperature allowed by the technology) with the ambient temperature.

The voltage acceleration has been defined based on JEDEC results, and is defined using

Equation 2.

Equation 2

Where:

AFV is the voltage acceleration factor

 is the voltage acceleration constant in 1/V, constant technology parameter ( = 1)

VS is the stress voltage used for the accelerated test

VU is the voltage used for the application

The temperature acceleration is driven by the Arrhenius model, and is defined in Equation 3.

Equation 3

Where:

AFT is the temperature acceleration factor

Ea is the activation energy of the technology based on the failure rate

k is the Boltzmann constant (8.6173 x 10-5 eVk-1)

TU is the temperature of the die when VU is used (K)

TS is the temperature of the die under temperature stress (K)

The final acceleration factor, AF, is the multiplication of the voltage acceleration factor and

the temperature acceleration factor (Equation 4).

Equation 4

AF is calculated using the temperature and voltage defined in the mission profile of the

product. The AF value can then be used in Equation 5 to calculate the number of months of

use equivalent to 1000 hours of reliable stress duration.

 V

–





------

–









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