HD64646FS datasheet(42/50 Pages) HITACHI

42 / 50 page

HD64645/64646

Electrical Characteristics

DC Characteristics (V

CC = 5.0V ±10%, GND = 0V, Ta = –20°C to +75°C, unless otherwise noted)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

Input high

voltage

RES, MODE,

SK0, SK1

VIH

CC – 0.5

CC + 0.3

DCLK, ON/

OFF

2.2

CC + 0.3

All others

2.0

CC + 0.3

Input low

voltage

All others

VIL

–0.3

0.8

Output high

TTL interface*

VOH

2.4

OH = –400 µA

voltage

CMOS interface*

CC – 0.8

OH = –400 µA

Output low

TTL interface

VOL

0.4

OL = 1.6 mA

voltage

CMOS interface

0.8

OL = 400 µA

Input leakage

current

All inputs except

DB0–DB7

–2.5

+2.5

µA

Three state

(off-state)

leakage current

DB0–DB7

TSL

–10

+10

µA

Current

dissipation*

Notes: 1. TTL Interface; MA0–MA15, RA0–RA4, DISPTMG, CUDISP, DB0–DB7, MCLK

C-MOS Interface; LU0–LU3, LD0–LD3, CL1, CL2, M, FLM

2. Input/output current is excluded. When input is at the intermediate level with CMOS, excessive

current flows through the input circuit to power supply. Input level must be fixed at high or low to

avoid this condition.

3. If the capacitive loads of LU0–LU3 and LD0–LD3 exceed the rating, noise over 0.8 V may be

produced on CUDISP, DISPTMG, MCLK, FLM and M. In case the loads of LU0–LU3 and LD0–

LD3 are larger than the ratings, supply signals to the LCD module through buffers.

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