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STM32F401CD Folha de dados(PDF) 112 Page - STMicroelectronics

Nome de Peças STM32F401CD
Descrição Electrónicos  Clock, reset and supply management
PDF  135 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F401CD Folha de dados(HTML) 112 Page - STMicroelectronics

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Electrical characteristics
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6.3.21
Temperature sensor characteristics
6.3.22
VBAT monitoring characteristics
6.3.23
Embedded reference voltage
The parameters given in Table 75 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 14.
Table 72. Temperature sensor characteristics
Symbol
Parameter
Min
Typ
Max
Unit
TL(1)
VSENSE linearity with temperature
-
±1
±2°C
Avg_Slope(1) Average slope
-
2.5
-
mV/°C
V25(1)
Voltage at 25 °C
-
0.76
-
V
tSTART(2)
Startup time
-
6
10
µs
TS_temp(2)
ADC sampling time when reading the temperature (1 °C accuracy)
10
-
-
µs
1. Guaranteed by characterization, not tested in production.
2. Guaranteed by design, not tested in production.
Table 73. Temperature sensor calibration values
Symbol
Parameter
Memory address
TS_CAL1
TS ADC raw data acquired at temperature of 30 °C, VDDA= 3.3 V
0x1FFF 7A2C - 0x1FFF 7A2D
TS_CAL2
TS ADC raw data acquired at temperature of 110 °C, VDDA= 3.3 V 0x1FFF 7A2E - 0x1FFF 7A2F
Table 74. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-50-
K
Ω
Q
Ratio on VBAT measurement
-
4
-
Er(1)
Error on Q
–1
-
+1
%
TS_vbat(2)(2)
ADC sampling time when reading the VBAT
1 mV accuracy
5-
-
µs
1. Guaranteed by design, not tested in production.
2. Shortest sampling time can be determined in the application by multiple iterations.
Table 75. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage
–40 °C < TA < +105 °C
1.18
1.21
1.24
V
TS_vrefint(1)
ADC sampling time when reading the
internal reference voltage
-10
-
-
µs
VRERINT_s(2)
Internal reference voltage spread over the
temperature range
VDD = 3V ± 10mV
-
3
5
mV



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