STS5DPF20L datasheet(2/9 Pages) STMICROELECTRONICS

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STS5DPF20L

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Table 3: Absolute Maximum ratings

( ) Pulse width limited by safe operating area

Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

Table 4: Thermal Data

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: On/Off

Table 6: Dynamic

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

± 16

Drain Current (continuous) at TC = 25°C

Single Operating

Drain Current (continuous) at TC = 100°C

Single Operating

IDM ( )

Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C Dual Operating

Total Dissipation at TC = 25°C Single Operating

1.6

Tstg

Operating Junction Temperature

Storage Temperature

150

-55 to 150

°C

Rthj-case

Thermal Resistance Junction-case Single Operating

Dual Operating

62.5

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS= Max Rating

VDS= Max Rating, TC= 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS= ± 16V

±100

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID= 250 µA

11.6

2.5

RDS(on)

Static Drain-source On

Resistance

VGS= 10 V, ID= 2.5 A

VGS= 4.5 V, ID= 2.5 A

0.045

0.070

0.055

0.075

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward

Transconductance

VDS = 15 V, ID= 2.5 A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 16V, f = 1 MHz, VGS = 0

1350

490

130

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