STPS6045C datasheet(3/9 Pages) STMICROELECTRONICS

Nome de Peças	STPS6045C

Descrição Electrónicos	Power Schottky Rectifier

PDF	9 Pages

Scroll/Zoom	100%

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

Logo

3 / 9 page

DocID4606 Rev 8

3/9

STPS6045C

Characteristics

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

500

µA

Tj = 125 °C

VF(1)

Forward voltage drop

Tj = 125 °C

IF = 30 A

0.53

0.63

Tj = 25 °C

IF = 60 A

0.84

Tj = 125 °C

IF = 60 A

0.68

0.78

1. Pulse test: tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation:

P + 0.48 x IF(AV) + 0.005 IF²(RMS)

Figure 1. Average forward power dissipation

versus average forward current (per diode)

Figure 2. Average current versus ambient

temperature (δ = 0.5, per diode)

Figure 3. Normalized avalanche power derating

versus pulse duration

Figure 4. Normalized avalanche power derating

versus junction temperature

STPS6045C Folha de dados(PDF) 3 Page - STMicroelectronics

STPS6045C Folha de dados(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

Folha de dados Download

Ligação URL