STPS80H100C datasheet(2/7 Pages) STMICROELECTRONICS

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Characteristics

STPS80H100C

2/7

Doc ID 6727 Rev 3

Characteristics

When the diodes 1 and 2 are used simultaneously :

ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

To evaluate the conduction losses use the following equation:

P = 0.5 x IF(AV) + 0.0055 IF

(RMS)

Table 2.

Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

IF(RMS) Forward rms current

IF(AV)

Average forward current

Tc = 155 °C

δ = 0.5

Per diode

Per device

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

400

IRRM

Repetitive peak reverse current

tp = 2 µs, F= 1 kHz

PARM

Repetitive peak avalanche power

tp = 1 µs, Tj = 25 °C

39200

Tstg

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature(1)

condition to avoid thermal runaway for a diode on its own heatsink

175

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

Total

0.7

0.5

°C/W

Rth(c)

Coupling

0.3

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Pulse test: tp = 5 ms, δ < 2%

Reverse leakage

current

Tj = 25 °C

VR = VRRM

µA

Tj = 125 °C

(2)

Pulse test: tp = 380 µs, δ < 2%

Forward voltage drop

Tj = 25 °C

IF = 40 A

0.8

Tj = 125 °C

IF = 40 A

0.65

0.7

Tj = 25 °C

IF = 80 A

0.94

Tj = 125 °C

IF = 80 A

0.79

0.84

dPtot

dTj

Rth(j-a)

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