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STPS40L45C Folha de dados(PDF) 3 Page - STMicroelectronics

Nome de Peças STPS40L45C
Descrição Electrónicos  Low drop power Schottky rectifier
PDF  11 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS40L45C Folha de dados(HTML) 3 Page - STMicroelectronics

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DocID6857 Rev 5
3/11
STPS40L45C
Characteristics
11
Figure 1. Average forward power dissipation
versus average forward current (per diode)
Figure 2. Average forward current versus
ambient temperature (
= 0.5, per diode)
0
2
4
6
8
1012 1416 18202224
0
2
4
6
8
10
12
14
16
IF(av) (A)
PF(av)(W)
T
δ=tp/T
tp
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
18
20
22
Tamb(°C)
IF(av)(A)
Rth(j-a)=15°C/W
Rth(j-a)=Rth(j-c)
T
δ=tp/T
tp
Figure 3. Normalized avalanche power derating
versus pulse duration
Figure 4. Normalized avalanche power derating
versus junction temperature
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (µs)
p
P(tp)
P
(1 µs)
ARM
ARM
0
0.2
0.4
0.6
0.8
1
1.2
25
50
75
100
125
150
T (°C)
j
P(Tj)
P
(25 °C)
ARM
ARM
Figure 5. Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)
Figure 6. Relative variation of thermal
impedance junction to case versus pulse
duration
1E-3
1E-2
1E-1
1E+0
0
25
50
75
100
125
150
175
200
225
250
t(s)
IM(A)
Tc=25°C
Tc=125°C
Tc=75°C
IM
t
δ=0.5
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
δ=tp/T
tp
Single pulse
δ = 0.1
δ = 0.2
δ = 0.5



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