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STGW80V60DF Folha de dados(PDF) 6 Page - STMicroelectronics

Nome de Peças STGW80V60DF
Descrição Electrónicos  Low thermal resistance
PDF  18 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW80V60DF Folha de dados(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STGW80V60DF, STGWT80V60DF
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DocID024362 Rev 2
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse recovery time
I
F
= 80 A, V
R
= 400 V,
di/dt = 1000 A/μs
,
V
GE
= 15 V
, see Figure 28
-60
-
ns
Q
rr
Reverse recovery charge
-
112
-
nC
I
rrm
Reverse recovery current
-
3.6
-
A
dI
rr/
/dt
Peak rate of fall of reverse
recovery current during t
b
-
140
-
A/μs
E
rr
Reverse recovery energy
-
70
-
μJ
t
rr
Reverse recovery time
I
F
= 80 A, V
R
= 400 V,
di/dt = 1000 A/μs
, V
GE
= 15
V; T
J
= 175 °C
see
Figure 28
-
340
-
ns
Q
rr
Reverse recovery charge
-
2200
-
nC
I
rrm
Reverse recovery current
-
13
-
A
dI
rr/
/dt
Peak rate of fall of reverse
recovery current during t
b
-70
-
A/μs
E
rr
Reverse recovery energy
-
880
-
μJ



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