STF826 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STF826

4/12

DocID11748 Rev 2

Electrical characteristics

(TCASE = 25 °C; unless otherwise specified)

Table 4. Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current (VBE = 0)

VCE = -60 V

-10

μA

ICEO

Collector cut-off current (IB = 0)

VCE = -30 V

-100

μA

IEBO

Emitter cut-off current (IC = 0)

VEB = -5 V

-10

μA

V(BR)CBO

Collector-base

breakdown voltage (IE = 0)

IC = -100 μA-60

V(BR)CEO

(1)

Collector-emitter breakdown

voltage (IB = 0)

IC = -10 mA

-30

V(BR)EBO

Collector-emitter breakdown

voltage (IC = 0)

IE = -100 μA-5

VCE(sat)

(1)

Collector-emitter saturation voltage

IC = -1 A, IB = -50 mA

IC = -2 A, IB = -100 mA

IC = -3 A, IB = -150 mA

-0.4

-0.7

-1.1

VBE(sat)

(1)

Base-emitter saturation voltage

IC = -2 A, IB = -100 mA

-1.2

hFE

DC current gain

IC = -100 mA, VCE = -2 V

IC = -1 A, VCE = -2 V

IC = -3 A, VCE = -2 V

100

300

Transistor frequency

VCE = -10 V, Ic= -0.1 A

100

MHz

1. Pulsed duration = 300 ms, duty cycle

≤1.5%.

Obsolete

Product(s)

- Obsolete

Product(s)

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