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BULT3P3 Folha de dados(PDF) 1 Page - STMicroelectronics |
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BULT3P3 Folha de dados(HTML) 1 Page - STMicroelectronics |
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1 / 8 page ![]() September 2009 Doc ID 16300 Rev 1 1/8 8 BULT3P3 Medium voltage fast-switching PNP power transistor Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Application ■ Electronic ballast for fluorescent lighting Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the BULT3N4, its complementary NPN transistor. Figure 1. Internal schematic diagram 3 2 1 SOT-32 Table 1. Device summary Order code Marking Package Packing BULT3P3 BULT3P3 SOT-32 Tube www.st.com |
Nº de peça semelhante - BULT3P3 |
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Descrição semelhante - BULT3P3 |
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