STF24N65M2 datasheet(3/20 Pages) STMICROELECTRONICS

3 / 20 page

STB24N65M2, STF24N65M2, STP24N65M2

Electrical ratings

DocID026475 Rev 2

3/20

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

D2PAK

TO-220

TO-220FP

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

16 (1)

Drain current (continuous) at TC = 100 °C

10 (1)

IDM (2)

Drain current (pulsed)

64 (1)

PTOT

Total dissipation at TC = 25 °C

150

dv/dt (3)

Peak diode recovery voltage slope

V/ns

dv/dt (4)

MOSFET dv/dt ruggedness

V/ns

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t = 1 s; TC = 25 °C)

2500

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

Notes:

(1)Limited by maximum junction temperature.

(2)Pulse width limited by safe operating area.

(3)ISD ≤ 16 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 80% V(BR)DSS.

(4)VDS ≤ 520 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

D2PAK

TO-220

TO-220FP

Rthj-case

Thermal resistance junction-case max

0.83

4.2

°C/W

Rthj-pcb

Thermal resistance junction-pcb max (1)

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Notes:

(1)When mounted on 1 inch² FR-4, 2 Oz copper board.

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

2.2

EAS

Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50V)

650

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