PXT8550 datasheet(2/4 Pages) BILIN

Nome de Peças	PXT8550

Descrição Electrónicos	PLASTIC-ENCAPSULATE TRANSISTORS

PDF	4 Pages

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Fabricante Electrônico	BILIN [Galaxy Semi-Conductor Holdings Limited]

Página de início	http://www.galaxycn.com

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Production specification

PLASTIC-ENCAPSULATE TRANSISTORS

PXT8550

E030

www.gmicroelec.com

Rev.A

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-100μA, IE=0

-40

Collector-emitter breakdown voltage

V(BR)CEO

IC=-0.1mA ,IB=0

-25

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA, IC=0

-5

Collector cut-off current

ICBO

VCB=-40V, IE=0

-0.1

Emitter cut-off current

ICEO

VCE=-20V,IE=0

-0.1

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

DC current gain

hFE

VCE=-1V, IC=-100mA

VCE=-1V, IC=-800mA

400

Collector-emitter saturation voltage

VCE(sat)

IC=-800mA ,IB=-80mA

-0.5

Base-emitter saturation voltage

VBE(sat)

IC=-800mA, IB=-80mA

-1.2

Base-emitter volatage

VBE

VCE=-1V,IC=-10mA

-1

Base-emitter positive favor voltage

VBEF

IB=-1A

-1.55

Transition frequency

VCE=-10V,IC=-50mA,

100

MHz

Output Capacitance

Cob

VCB=-10V, f=1MHz ,IE=0

CLASSIFICATION OF hFE(1)

Rank

Range

85-160

120-200

160-300

300-400

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