NTZD3152PT1H datasheet(4/5 Pages) ONSEMI

Nome de Peças	NTZD3152PT1H

Descrição Electrónicos	Small Signal MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrônico	ONSEMI [ON Semiconductor]

Página de início	http://www.onsemi.com

Logo

4 / 5 page

NTZD3152P

www.onsemi.com

TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

VGS = 0 V

−VGS

510

150

100

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

QG, TOTAL GATE CHARGE (nC)

TJ = 25°C

COSS

CISS

CRSS

ID = −0.215 A

TJ = 25°C

250

1.8

1.6

QGD

100

RG, GATE RESISTANCE (W)

VDD = −10 V

ID = −0.215 A

VGS = −4.5 V

100

200

td(off)

td(on)

−VDS

1.4

0.2

1.2

0.9

0.2

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

VGS = 0 V

TJ = 25°C

0.6

0.7

0.5

0.3

0.4

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

0.4

0.6

0.8

0.6

0.4

QGS

Figure 11. Safe Operating Area

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

100

0.1

0.001

0.1

RDS(on) Limit

Thermal Limit

Package Limit

100 ms

10 ms

VGS ≤ 6 V

Single Pulse

TC = 25°C

0.01

NTZD3152PT1H Folha de dados(PDF) 4 Page - ON Semiconductor

NTZD3152PT1H Folha de dados(HTML) 4 Page - ON Semiconductor

Html Pages

1 2 3 4 5

Folha de dados Download

Ligação URL