NTZD3154N_14 datasheet(2/5 Pages) ONSEMI

2 / 5 page

NTZD3154N

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

−

Drain−to−Source Breakdown Voltage Tem-

perature Coefficient

V(BR)DSS/TJ

−

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

VDS = 16 V

TJ = 25°C

−

1.0

TJ = 125°C

−

5.0

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = "4.5 V

−

"5.0

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

0.45

−

1.0

Negative Threshold Temperature Coefficient

VGS(TH)/TJ

−

2.0

−

mV/

°C

Drain−to−Source On Resistance

RDS(on)

VGS = 4.5 V, ID = 540 mA

−

0.4

0.55

VGS = 2.5 V, ID = 500 mA

−

0.5

0.7

VGS = 1.8 V, ID = 350 mA

−

0.7

0.9

Forward Transconductance

gFS

VDS = 10 V, ID = 540 mA

−

1.0

−

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz, VDS = 16 V

−

150

Output Capacitance

COSS

−

Reverse Transfer Capacitance

CRSS

−

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 10 V; ID = 540 mA

−

1.5

2.5

Threshold Gate Charge

QG(TH)

−

0.1

−

Gate−to−Source Charge

QGS

−

0.2

−

Gate−to−Drain Charge

QGD

−

0.35

−

SWITCHING CHARACTERISTICS, VGS = V (Note 4)

Turn−On Delay Time

td(ON)

VGS = 4.5 V, VDD = 10 V, ID = 540 mA,

RG = 10 W

−

6.0

−

Rise Time

−

4.0

−

Turn−Off Delay Time

td(OFF)

−

Fall Time

−

8.0

−

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 350 mA

TJ = 25°C

−

0.7

1.2

TJ = 125°C

−

0.6

−

Reverse Recovery Time

tRR

VGS = 0 V, dISD/dt = 100 A/ms, IS = 350 mA

−

6.5

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces).

3. Pulse Test: pulse width

v 300 ms, duty cycle v2%.

4. Switching characteristics are independent of operating junction temperatures.

NTZD3154N Folha de dados(PDF) 2 Page - ON Semiconductor

NTZD3154N Folha de dados(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5

Folha de dados Download

Ligação URL