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NTZD3152PT1G Folha de dados(PDF) 1 Page - ON Semiconductor

Nome de Peças NTZD3152PT1G
Descrição Electrónicos  Small Signal MOSFET
PDF  5 Pages
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTZD3152PT1G Folha de dados(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 6
1
Publication Order Number:
NTZD3152P/D
NTZD3152P
Small Signal MOSFET
−20 V, −430 mA, Dual P−Channel
with ESD Protection, SOT−563
Features
Low RDS(on) Improving System Efficiency
Low Threshold Voltage
ESD Protected Gate
Small Footprint 1.6 x 1.6 mm
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Cell Phones, Digital Cameras, PDAs, Pagers, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±6.0
V
Continuous Drain Current
(Note 1)
Steady
State
TA = 25°C
ID
−430
mA
TA = 85°C
−310
Power Dissipation
(Note 1)
Steady State
PD
250
mW
Continuous Drain Current
(Note 1)
t
v 5 s
TA = 25°C
ID
−455
mA
TA = 85°C
−328
Power Dissipation
(Note 1)
t
v 5 s
PD
280
mW
Pulsed Drain Current
tp = 10 ms
IDM
−750
mA
Operating Junction and Storage Temperature
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
−350
mA
Lead Temperature for Soldering Purposes
(1/8
″ from case for 10 s)
TL
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
500
°C/W
Junction−to−Ambient – t
v 5 s (Note 1)
447
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in. sq. pad size
(Cu. area = 1.127 in. sq. [1 oz.] including traces).
www.onsemi.com
V(BR)DSS
RDS(on) Typ
ID Max
−20 V
0.5
W @ −4.5 V
0.6
W @ −2.5 V
−430 mA
1.0
W @ −1.8 V
Device
Package
Shipping
ORDERING INFORMATION
NTZD3152PT1G
SOT−563
(Pb−Free)
4000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Top View
D1
G2
S2
S1
G1
6
5
4
1
2
3
D2
PINOUT: SOT−563
P−Channel
MOSFET
NTZD3152PT5H
SOT−563
(Pb−Free)
8000 / Tape & Reel
D1
S1
G1
D2
S2
G2
TU
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
TU M
G
G
1
MARKING DIAGRAM
1
6
SOT−563−6
CASE 463A
(Note: Microdot may be in either location)
NTZD3152PT1H


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