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NTZD3152PT1G Folha de dados(PDF) 1 Page - ON Semiconductor |
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NTZD3152PT1G Folha de dados(HTML) 1 Page - ON Semiconductor |
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1 / 5 page ![]() © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 6 1 Publication Order Number: NTZD3152P/D NTZD3152P Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 Features • Low RDS(on) Improving System Efficiency • Low Threshold Voltage • ESD Protected Gate • Small Footprint 1.6 x 1.6 mm • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Load/Power Switches • Power Supply Converter Circuits • Battery Management • Cell Phones, Digital Cameras, PDAs, Pagers, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±6.0 V Continuous Drain Current (Note 1) Steady State TA = 25°C ID −430 mA TA = 85°C −310 Power Dissipation (Note 1) Steady State PD 250 mW Continuous Drain Current (Note 1) t v 5 s TA = 25°C ID −455 mA TA = 85°C −328 Power Dissipation (Note 1) t v 5 s PD 280 mW Pulsed Drain Current tp = 10 ms IDM −750 mA Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS −350 mA Lead Temperature for Soldering Purposes (1/8 ″ from case for 10 s) TL 260 °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient – Steady State (Note 1) RqJA 500 °C/W Junction−to−Ambient – t v 5 s (Note 1) 447 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in. sq. [1 oz.] including traces). www.onsemi.com V(BR)DSS RDS(on) Typ ID Max −20 V 0.5 W @ −4.5 V 0.6 W @ −2.5 V −430 mA 1.0 W @ −1.8 V Device Package Shipping† ORDERING INFORMATION NTZD3152PT1G SOT−563 (Pb−Free) 4000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Top View D1 G2 S2 S1 G1 6 5 4 1 2 3 D2 PINOUT: SOT−563 P−Channel MOSFET NTZD3152PT5H SOT−563 (Pb−Free) 8000 / Tape & Reel D1 S1 G1 D2 S2 G2 TU = Specific Device Code M = Date Code G = Pb−Free Package TU M G G 1 MARKING DIAGRAM 1 6 SOT−563−6 CASE 463A (Note: Microdot may be in either location) NTZD3152PT1H |
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