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ADA4177-2ARZ-R7 Folha de dados(PDF) 7 Page - Analog Devices

Nome de Peças ADA4177-2ARZ-R7
Descrição Electrónicos  OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps
PDF  31 Pages
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Fabricante Electrônico  AD [Analog Devices]
Página de início  http://www.analog.com
Logo AD - Analog Devices

ADA4177-2ARZ-R7 Folha de dados(HTML) 7 Page - Analog Devices

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Data Sheet
ADA4177-1/ADA4177-2/ADA4177-4
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Rating
Supply Voltage
36 V
Input Voltage
V
SY ± 32 V
Differential Input Voltage
±V
SY
Output Short-Circuit Duration to GND
See the Maximum Power
Dissipation section
Storage Temperature Range
−65°C to +150°C
Operating Temperature Range
−40°C to +125°C
Junction Temperature Range
−65°C to +150°C
Lead Temperature, Soldering (10 sec)1
300°C
ESD
Human Body Model (HBM)2
4 kV
Field Induced Charged Device
Model (FICDM)3
1250 V
Machine Model (MM)
200 V
1 IPC/JEDEC J-STS-020D applicable standard.
2 ESDA/JEDEC JS-001-2011 applicable standard.
3 JESD22-C101 (ESD FICDM standard of JEDEC) applicable standard.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
MAXIMUM POWER DISSIPATION
The ADA4177-1, ADA4177-2, and ADA4177-4 can drive a
short-circuit output current of up to 65 mA. However, the
usable output load current drive is limited by the maximum
power dissipation allowed by the device package. The absolute
maximum junction temperature is 150°C (see Table 4). The
junction temperature can be estimated as follows:
TJ = PD × θJA + TA
where:
TJ is the die junction temperature.
PD is the power dissipated in the package.
θJA is the thermal resistance of the package.
TA is the ambient temperature.
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated by the
output stage transistor. It is calculated as follows:
PD = (VSY × ISY) + (VSY − VOUT) × ILOAD
where:
VSY is the power supply rail.
ISY is the quiescent current.
VOUT is the output of the amplifier.
ILOAD is the output load.
Do not exceed the 150°C maximum junction temperature for
the device. Exceeding the junction temperature limit can cause
degradation in the parametric performance or even destroy the
device. Refer to Technical Article MS-2251, Data Sheet Intricacies—
Absolute Maximum Ratings and Thermal Resistances, for more
information.
THERMAL RESISTANCE
Thermal resistance between junction and ambient (θJA) is
specified for the worst-case conditions, that is, a device soldered
in a circuit board for surface-mount packages.
Table 5. Thermal Resistance
Package Type
θ
JA
θ
JC
Unit
8-Lead MSOP
190
44
°C/W
8-Lead SOIC
158
43
°C/W
14-Lead TSSOP
240
43
°C/W
14-Lead SOIC
115
36
°C/W
ESD CAUTION
Rev. C | Page 7 of 31



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