MRF9130LR3 datasheet(2/12 Pages) MOTOROLA

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MRF9130LR3 MRF9130LSR3

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vds, VGS = 0 Vdc)

IDSS

—

µAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vds, VGS = 0 Vdc)

IDSS

—

µAdc

Gate-Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

µAdc

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 450 µAdc)

VGS(th)

Vdc

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 1000 mAdc)

VGS(Q)

—

3.6

—

Vdc

Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 3 Adc)

VDS(on)

—

0.2

0.4

Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 9 Adc)

gfs

—

DYNAMIC CHARACTERISTICS (1)

Output Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss

—

110

—

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

4.4

—

FUNCTIONAL TESTS (In Motorola Test Fixture)

Power Output, 1 dB Compression Point

(VDD = 28 Vdc, IDQ = 1000 mA, f = 921 and 960 MHz)

P1dB

120

135

—

Common-Source Amplifier Power Gain

(VDD = 28 Vdc, Pout = 130 W, IDQ = 1000 mA, f = 921 and 960 MHz)

Gps

15.5

16.5

—

Drain Efficiency

(VDD = 28 Vdc, Pout = 130 W, IDQ = 1000 mA, f = 921 and 960 MHz)

—

Input Return Loss

(VDD = 28 Vdc, Pout = 130 W, IDQ = 1000 mA, f = 921 and 960 MHz)

IRL

—

-12

-9

Output Mismatch Stress

(VDD = 28 Vdc, Pout = 130 W CW, IDQ = 1000 mA,

f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)

No Degradation In Output Power

Before and After Test

(1) Part is internally input matched.

Freescale Semiconductor, Inc.

For More Information On This Product,

Go to: www.freescale.com

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