SB3150G-SMB-R datasheet(2/3 Pages) UTC

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SB3150

Preliminary

DIODE

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R202-063.a



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Repetitive Peak Reverse Voltage

VRRM

150

Working Peak Reverse Voltage

VRWM

150

DC Blocking Voltage

150

Average Rectified Output Current

3.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

IFSM

110

Junction Temperature Range

-65 ~ +150

°C

Storage Temperature Range

TSTG

-65 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Typical Thermal Resistance

θJL

°C/W



ELECTRICAL CHARACTERISTICS (PER LEG) (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Reverse Breakdown Voltage

V(BR)R

IR=0.50mA

150

Instantaneous Forward Voltage Drop

VFM

IF=3.0A, TJ=25°C

0.89

Rated DC Voltage, TJ=25°C

1.0

Peak Reverse Current at Rated DC

Blocking Voltage

IRM

Rated DC Voltage, TJ=125°C

7.0

Junction Capacitance (Note 2)

250

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

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