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DS1135LZ2012 Folha de dados(PDF) 4 Page - Dallas Semiconductor

Nome de Peças DS1135LZ2012
Descrição Electrónicos  3V 3-in-1 High-Speed Silicon Delay Line
PDF  6 Pages
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Fabricante Electrônico  DALLAS [Dallas Semiconductor]
Página de início  https://www.maximintegrated.com/en.html
Logo DALLAS - Dallas Semiconductor

DS1135LZ2012 Folha de dados(HTML) 4 Page - Dallas Semiconductor

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DS1135-L
4 of 6
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-1.0V to +6.0 V
Operating Temperature
-40°C to +85°C
Storage Temperature
-55
°C to +125°C
Soldering Temperature
See J-STD-020A specification
Short Circuit Output Current
50mA for 1 second
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(-40
°C to +85°C;VCC=2.7-3.6V)
PARAMETER
SYMBOL
TEST
CONDITION
MIN
TYP
MAX
UNITS
Supply Voltage
VCC
2.7
3.3
3.6
V
Active Current
ICC
VCC =3.6V
Period=1
ms
10
mA
High Level Input Voltage
VIH
2.0
VCC +0.5
V
Low Level Input Voltage
VIL
-0.5
0.8
V
Input Leakage
IL
0V≤VI ≤VCC
-1.0
+1.0
mA
High Level Output
Current
ICC
VCC =2.7V
VOH =2V
-1.0
mA
Low Level Output
Current
ICC
VCC =2.7V
VOL=0.4V
8mA
AC ELECTRICAL CHARACTERISTICS
(-40
°C to +85°C;VCC=2.7-3.6V)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Period
tPERIOD
2 (tWI )ns
Input Pulse Width
tWI
100% of
Delay Value
ns
Input-to-Output Delay
tPLH, tPHL
See Table 1
ns
Output Rise or Fall Time
tOF, tOR
2.0
2.5
ns
Power-up Time
tPU
1ms
2
CAPACITANCE
(TA=25
°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Capacitance
CIN
10
pF



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