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D2398 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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D2398 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD2398 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 100 V V(BR)CBO Collector-Base Breakdown Voltage IC=50uA; IE= 0 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 3mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 1mA 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE DC Current Gain IC= 1A; VCE= 2V 1000 10000 COB Output Capacitance IE= 0 ; VCB= 10V,ftest= 1MHz 25 pF |
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