BLUENRG-MS datasheet(30/42 Pages) STMICROELECTRONICS

30 / 42 page

Electrical specification

BlueNRG-MS

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C/I

Image±1

MHz

Adjacent (±1 MHz)

Interference to in-band

image frequency

-1MHz

-3MHz

Wanted signal = -67 dBm,

BER

≤ 0.1%

-25

dBc

Out of Band Blocking (Interfering signal CW)

C/I Block

Interfering signal frequency

30 MHz – 2000 MHz

Wanted signal = -67 dBm,

BER

≤ 0.1%, Measurement

resolution 10 MHz

-30

dBm

C/I Block

Interfering signal frequency

2003 MHz – 2399 MHz

Wanted signal = -67 dBm,

BER

≤ 0.1%, Measurement

resolution 3 MHz

-35

dBm

C/I Block

Interfering signal frequency

2484 MHz – 2997 MHz

Wanted signal = -67 dBm,

BER

≤ 0.1%, measurement

resolution 3 MHz

-35

dBm

C/I Block

Interfering signal frequency

3000 MHz – 12.75 GHz

Wanted signal = -67 dBm,

BER

≤ 0.1%, measurement

resolution 25 MHz

-30

dBm

Intermodulation characteristics (CW signal at f 1, BLE interfering signal at f 2)

P_IM(3)

Input power of IM interferes

at 3 and 6 MHz distance

from wanted signal

Wanted signal = -64 dBm,

BER

≤ 0.1%

-33

dBm

P_IM(-3)

Input power of IM interferes

at -3 and -6 MHz distance

from wanted signal

Wanted signal = -64 dBm,

BER

≤ 0.1%

-43

dBm

P_IM(4)

Input power of IM interferes

at ±4 and ±8 MHz distance

from wanted signal

Wanted signal = -64 dBm,

BER

≤ 0.1%

-33

dBm

P_IM(5)

Input power of IM interferes

at ±5 and ±10 MHz distance

from wanted signal

Wanted signal = -64 dBm,

BER

≤ 0.1%

-33

dBm

10.5

High speed crystal oscillator (HSXOSC) characteristics

Characteristics measured over recommended operating conditions unless otherwise

specified. Typical value are referred to T A= 25 °C, V BAT= 3.0 V.

Table 13: High speed crystal oscillator characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

f NOM

Nominal

frequency

16/32

MHz

f TOL

Frequency

tolerance

Includes initial accuracy, stability over temperature,

aging and frequency pulling due to incorrect load

capacitance.

±50

ppm

ESR

Equivalent series

resistance

100

P D

Drive level

100

µW

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