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STPSC10H12D Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STPSC10H12D
Descrição Electrónicos  1200 V power Schottky silicon carbide diode
PDF  8 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPSC10H12D Folha de dados(HTML) 1 Page - STMicroelectronics

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May 2016
DocID029139 Rev 1
1/8
This is information on a product in full production.
www.st.com
STPSC10H12
1200 V power Schottky silicon carbide diode
Datasheet - production data
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Robust high voltage periphery
Description
The SiC diode, available in TO-220AC, is an
ultrahigh performance power Schottky rectifier. It
is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of
a low VF Schottky diode structure with a 1200 V
rating. Due to the Schottky construction, no
recovery is shown at turn-off and ringing patterns
are negligible. The minimal capacitive turn-off
behavior is independent of temperature.
Especially suited for use in PFC and secondary
side applications, this ST SiC diode will boost the
performance in hard switching conditions. This
rectifier will enhance the performance of the
targeted application. Its high forward surge
capability ensures a good robustness during
transient phases.
Table 1: Device summary
Symbol
Value
IF(AV)
10 A
VRRM
1200 V
Tj (max)
175 °C
VF (typ)
1.35 V
A
K
A
K
K
TO-220AC


Nº de peça semelhante - STPSC10H12D

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
STMicroelectronics		 STPSC10H12DY STMICROELECTRONICS-STPSC10H12DY Datasheet
534Kb / 10P		 Automotive grade 1200 V power Schottky silicon carbide diode
23-Jan-2017
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Descrição semelhante - STPSC10H12D

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