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STGW10M65DF2 Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STGW10M65DF2
Descrição Electrónicos  Trench gate field-stop IGBT, M series 650 V, 10 A low loss
PDF  16 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW10M65DF2 Folha de dados(HTML) 1 Page - STMicroelectronics

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March 2016
DocID029083 Rev 1
1/16
This is information on a product in full production.
www.st.com
STGW10M65DF2
Trench gate field-stop IGBT, M series 650 V, 10 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 10 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represent an optimum compromise
in performance to maximize the efficiency of
inverter systems where low-loss and short-circuit
capability are essential. Furthermore, a positive
VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Order code
Marking
Package
Packing
STGW10M65DF2
G10M65DF2
TO-247
Tube
TO-247
1
2
3


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