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STGD6M65DF2 Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STGD6M65DF2
Descrição Electrónicos  Trench gate field-stop IGBT, M series 650 V, 6 A low loss
PDF  20 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD6M65DF2 Folha de dados(HTML) 1 Page - STMicroelectronics

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August 2016
DocID028703 Rev 3
1/20
This is information on a product in full production.
www.st.com
STGD6M65DF2
Trench gate field-stop IGBT, M series 650 V, 6 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 6 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Order code
Marking
Package
Packing
STGD6M65DF2
G6M65DF2
DPAK
Tape and reel


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