TSB572 datasheet(7/27 Pages) STMICROELECTRONICS

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TSB572

Electrical characteristics

DocID028308 Rev 2

7/27

Table 4: Electrical characteristics at Vcc = 12 V, Vicm = Vcc/2, Tamb = 25 °C, and RL

connected to Vcc/2 (unless otherwise specified)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

DC performance

Vio

Input offset voltage

-1.5

1.5

-40 °C < T < 125 °C

-2.1

2.1

ΔVio/ΔT

Input offset voltage drift

-40 °C < T < 125 °C

1.5

μV/°C

Iio

Input offset current

-40 °C < T < 125 °C

Iib

Input bias current

-40 °C < T < 125 °C

CIN

Input capacitor

RIN

Input impedance

TΩ

CMR

Common mode rejection

ratio 20 log (ΔVicm/ΔVio)

Vicm = (VCC-) to (VCC+) - 1.5 V,

Vout = VCC/2

100

123

-40 °C < T < 125 °C

Vicm = (VCC-) to (VCC+), Vout = VCC/2

106

-40 °C < T < 125 °C

SVR

Supply voltage rejection ratio

20 log (ΔVCC/ΔVio)

VCC = 4 to 12 V

-40 °C < T < 125 °C

Avd

Large signal voltage gain

RL= 10 kΩ, Vout = 0.5 to 11.5 V

106

-40 °C < T < 125 °C

VOH

High level output voltage

(drop voltage from VCC+)

RL = 10 kΩ

100

-40 °C < T < 125 °C

150

VOL

Low level output voltage

RL = 10 kΩ

-40 °C < T < 125 °C

Iout

Isink

Vout = VCC

-40 °C < T < 125 °C

Isource

Vout = 0 V

-40 °C < T < 125 °C

ICC

Supply current (per channel)

No load, Vout = VCC/2

360

450

μA

-40 °C < T < 125 °C

530

AC performance

GBP

Gain bandwidth product

RL = 10 kΩ, CL = 100 pF

1.6

2.4

MHz

-40 °C < T < 125 °C

1.3

ϕm

Phase margin

RL = 10 kΩ, CL = 100 pF

degrees

Gain margin

RL = 10 kΩ, CL = 100 pF

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