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STM8AL3LE8x Folha de dados(PDF) 89 Page - STMicroelectronics |
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STM8AL3LE8x Folha de dados(HTML) 89 Page - STMicroelectronics |
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89 / 133 page ![]() DocID027180 Rev 5 89/133 STM8AL31E8x STM8AL3LE8x Electrical parameters 119 Figure 23. Typical HSI frequency vs. VDD Table 34. HSI oscillator characteristics Symbol Parameter Conditions(1) Min. Typ. Max. Unit fHSI Frequency VDD = 3.0 V - 16 - MHz ACCHSI HSI oscillator user trimming accuracy Trimmed by the application for any VDD and TA conditions -1 - 1 % HSI oscillator accuracy (factory calibrated) VDD ≤1.8 V≤ VDD ≤ 3.6 V -40 °C ≤TA ≤ 125 °C -5 - 5 TRIM HSI user trimming step(2) Trimming code ≠ multiple of 16 - 0.4 0.7(2) % Trimming code = multiple of 16 - - ± 1.5(2) tsu(HSI) HSI oscillator setup time (wakeup time) -- 3.7 6 (3) µs IDD(HSI) HSI oscillator power consumption - - 100 140(3) µA 1. VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified. 2. The trimming step differs depending on the trimming code. It is usually negative on the codes which are multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0). Refer to the AN3101 “STM8L15x internal RC oscillator calibration” application note for more details. 3. Guaranteed by design. |
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