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STM8AL3136 Folha de dados(PDF) 80 Page - STMicroelectronics

Nome de Peças STM8AL3136
Descrição Electrónicos  Automotive 8-bit ultra-low-power MCU, up to 32 Kbyte Flash, RTC, data EEPROM, LCD, timers, USART, I2C, SPI, ADC, DAC, COMPs
PDF  124 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8AL3136 Folha de dados(HTML) 80 Page - STMicroelectronics

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Electrical parameters
STM8AL313x/4x/6x STM8AL3L4x/6x
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DocID18474 Rev 7
9.3.5
Memory characteristics
TA = -40 to 125 °C unless otherwise specified.
Flash memory
Table 36. RAM and hardware registers
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode (1)
Halt mode (or Reset)
1.65
-
-
V
1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware registers (only in
Halt mode). Guaranteed by characterization, not tested in production.
Table 37. Flash program memory/data EEPROM memory
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage
(all modes, read/write/erase)
fSYSCLK = 16 MHz
1.65
-
3.6
V
tprog
Programming time for 1 or 128 bytes (block)
erase/write cycles (on programmed byte)
--
6
-
ms
Programming time for 1 to 128 bytes (block)
write cycles (on erased byte)
--
3
-
Iprog
Programming/ erasing consumption
TA=+25 °C, VDD = 3.0 V
-
0.7
-
mA
TA=+25 °C, VDD = 1.8 V
-
-
Table 38. Flash program memory
Symbol
Parameter
Conditions
Min
Max
Unit
TWE
Temperature for writing and erasing
-
-40
125
°C
NWE
Flash program memory endurance
(erase/write cycles)(1)
TA = 25 °C
1000
-
cycles
tRET
Data retention time
TA = 25 °C
40
-
years
TA = 55 °C
20
-
1. The physical granularity of the memory is four bytes, so cycling is performed on four bytes even when a write/erase
operation addresses a single byte.



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