IRL7472L1TRPbF datasheet(5/12 Pages) INFINEON

Nome de Peças	IRL7472L1TRPbF

Descrição Electrónicos	DirectFET짰 N-Channel Power MOSFET

PDF	12 Pages

Scroll/Zoom	100%

Fabricante Electrônico	INFINEON [Infineon Technologies AG]

Página de início	http://www.infineon.com

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IRL7472L1TRPbF

2016-8-9

Fig 10. Maximum Safe Operating Area

Fig 11. Drain-to-Source Breakdown Voltage

Fig 9. Typical Source-Drain Diode Forward Voltage

Fig 12. Typical Coss Stored Energy

Fig 13. Typical On-Resistance vs. Drain Current

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VSD, Source-to-Drain Voltage (V)

1.0

100

1000

10000

TJ = 25°C

TJ = 175°C

VGS = 0V

-60

-20

100

140

180

TJ , Temperature ( °C )

Id = 5.0mA

-5

VDS, Drain-to-Source Voltage (V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

20 40 60 80 100 120 140 160 180 200

ID, Drain Current (A)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

Vgs = 3.5V

Vgs = 4.0V

Vgs = 4.5V

Vgs = 5.5V

Vgs = 6.0V

Vgs = 8.0V

Vgs = 10V

0.1

VDS, Drain-to-Source Voltage (V)

0.1

100

1000

Tc = 25°C

Tj = 175°C

Single Pulse

10msec

1msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

Limited by Package

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