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LM2650 Folha de dados(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Nome de Peças LM2650
Descrição Electrónicos  Synchronous Step-Down DC/DC Converter
PDF  11 Pages
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Fabricante Electrônico  NSC [National Semiconductor (TI)]
Página de início  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM2650 Folha de dados(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(All voltages are referenced to the PGND and GND pins.)
DC Voltage at PV
IN and VIN
20V
DC Voltage at SD, SLEEP LOGIC
and SYNC
15V
DC current into SW
±7.5A
Junction Temperature
Limited by the IC
DC Power Dissipation (Note 2)
1.28W
Storage Temperature
−65˚C to +150˚C
Soldering Time, Temperature (Note
3)
Wave (4 seconds)
Infrared (10 seconds)
Vapor Phase (75 seconds)
260˚C
240˚C
219˚C
ESD Susceptibility (Note 4)
1.3 kV
Operating Ratings (Note 1)
Supply Voltage Range (PV
IN and
V
IN)
4.5V to 18V
Junction Temperature Range
−40˚C to +125˚C
Electrical Characteristics
V
PVIN = 15V, VSLEEP LOGIC = 0V and VSD = 0V unless superseded under Conditions. Typicals and limits appearing in plain
type apply for T
A =TJ = +25˚C. Limits appearing in boldface type apply over the full junction temperature range shown under
Operating Ratings.
Symbol
Parameter
Conditions
Typ (Note 5)
Limit (Note 6)
Units
V
OUT
Output Voltage
R1 = 75 k
Ω, 1%,
R2=25 k
Ω, 1%,
7.5V
≤ V
PVIN ≤ 18V
0.12A
≤ I
LOAD ≤ 3A
5.00
4.80/4.75
5.20/5.25
V
V(min)
V(max)
η1
System Efficiency
I
LOAD = 1A, TA = 25˚C,
F
OSC Not Adjusted
94
%
η2
System Efficiency
I
LOAD = 3A, TA = 25˚C,
F
OSC Not Adjusted
89
%
V
REF
Reference Voltage
V
SLEEPLOGIC = 3V (Note 7)
1.25
1.281/1.294
1.219/1.206
V(min)
V(max)
I
Q
Quiescent Current in PWM
mode
V
FB =VREF
−20mV (Note 8)
4.0
6.50/7.0
mA
mA(max)
I
QS
Quiescent Current in Sleep
mode
IV
FB =VREF −20mV,
V
SLEEPLOGIC = 3V (Note 8)
850
1.35/1.60
µA
mA(max)
I
QSD
Quiescent Current in Shutdown
mode
V
SD =3V
(Note 8)
9
20/25
µA
µA(max)
R
DS(on) HS
DC On-Resistance
Drain-to-Source of the
High-Side Power Switch
I
DS = 1A,
V
SLEEPLOGIC = 3V,
V
FB = 3V,
V
BOOT = 24V
130
170/245
m
m
Ω(max)
R
DS(on) LS
DC On-Resistance
Drain-to-Source of the
Low-Side Power Switch
I
DS = 1A,
V
FB =3V
125
175/245
m
m
Ω(max)
I
LHS
Leakage current of the
High-Side Power Switch
V
PVIN = 18V, VSW = 0V,
V
SD =3V
100
10
nA
µA(max)
I
LLS
Leakage current of the
Low-Side Power Switch
V
PVIN = 18V, VSW = 18V,
V
SD =3V
95
210
µA
µA(max)
I
LIMIT
Active Current Limit of the
High-Side Power Switch
V
PVIN = 15V,
V
BOOT = 24V,
V
FB = 3V,
V
SLEEPLOGIC = 3V,
5.5
3.5
7.5
A
A(min)
A(max)
F
OSC
Oscillator Frequency
V
FB =VREF −20 mV
90
80/75
100/105
kHz
kHz(min)
kHz(max)
F
MAX
Maximum Oscillator Frequency
I
FREQ ADJ = 100µA,(Note 9)
V
FB =VREF −20 mV
315
270/260
360/370
kHz
kHz(min)
kHz(max)
D
MAX
Maximum Duty Cycle
V
FB =VREF −20 mV,
F
OSC Not Adjusted
97
94/93
%
%(min)
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