10N65F datasheet(2/2 Pages) CHONGQING

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Rev. 14-1

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Electrical Characteristics (Tc=25℃,unless otherwise noted)

Parameter

Symbol

Test Conditions

Mix

Typ

Max

Units

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V,ID=250uA

650

－

Breakdown Temperature Coefficient

ΔBVDSS

/ΔTJ

Reference to 25℃，

ID=250uA

－

0.6

－

V/℃

Zero Gate Voltage Drain Current

IDSS

VDS=650V,VGS=0V

－

Gate-Body Leakage Current,Forward

IGSSF

VGS=30V,VDS=0V

－

100

Gate-Body Leakage Current,Reverse

IGSSR

VGS=-30V,VDS=0V

－

-100

On Characteristics

Gate-Source Threshold Voltage

VGS(th)

VDS=0V,ID=250uA

－

Drain-Source On-State Resistance

RDS(on)

VGS=10V,ID=5A

－

0.71

0.85

Dynamic Characteristics

Input Capacitance

Ciss

VDS=25V,VGS=0V,

f=1.0MHZ

－

1500

Output Capacitance

Coss

－

180

Reverse Transfer Capacitance

Crss

－

Switching Characteristics

Turn-On Delay Time

td(on)

VDD=300V,ID=10A,

RG=25Ω

(Note4,5)

－

Turn-On Rise Time

－

Turn-Off Delay Time

td(off)

－

Turn-Off Fall Time

－

Total Gate Charge

VDS=520V,ID=10A,

VGS=10V, (Note4,5)

－

Gate-Source Charge

Qgs

－

Gate-Drain Charge

Qgd

－

Drain-Source Body Diode Charcteristics and Maximum Ratings

Continuous Diode Forward Current

－

Pulsed Diode Forward Current

ISM

－

Diode Forward Voltage

VSD

IS=10A,VGS=0V

－

1.5

Reverse Recovery Time

trr

VGS=0V,IS=10A,

dIF/dt=100A/us,

(Note4)

－

600

－

Reverse Recovery Charge

Qrr

－

4.3

－

Notes

Repetitive Rating:pulse width limited by maximum junction temperature.

VDD=50V,starling,L=5.5mH,Rg=25Ω,IAS=10A , TJ=25℃.

ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃.

Pulse width≤300us;duty cycle≤2%.

Repetitive rating; pulse width limited by maximum junction temperature.

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