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MUR2030CT Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MUR2030CT Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Ultrafast Rectifier MUR2030CT FEATURES · Guarding for over voltage protection · Dual rectifier construction,positive center tap · Metal of silicon rectifier,majority carrier conduction · Low forward voltage,high efficiency · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching power supply · Power switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 300 V IF(AV) Average Rectified Forward Current Per Leg Total device 10 20 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half- wave, single phase, 60Hz) 125 A PD Maximum power dissipation 62.5 W TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Nº de peça semelhante - MUR2030CT |
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Descrição semelhante - MUR2030CT |
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